Power MOSFET. EMH1405 Datasheet

EMH1405 MOSFET. Datasheet pdf. Equivalent

Part EMH1405
Description N-Channel Power MOSFET
Feature Ordering number : ENA1667A EMH1405 N-Channel Power MOSFET 30V, 8.5A, 19mΩ, Single EMH8 http://onse.
Manufacture ON Semiconductor
Datasheet
Download EMH1405 Datasheet



EMH1405
Ordering number : ENA1667A
EMH1405
N-Channel Power MOSFET
30V, 8.5A, 19mΩ, Single EMH8
http://onsemi.com
Features
ON-resistance RDS(on)1=14mΩ(typ)
4V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
30
±20
8.5
34
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125 EMH1405-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
0.5
2.0
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
TL
Electrical Connection
8765
KE
LOT No.
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002377/60210PE TK IM TC-00002377 No. A1667-1/7



EMH1405
EMH1405
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=15V, VGS=10V, ID=8.5A
IS=8.5A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=4A
RL=5Ω
D VOUT
EMH1405
P.G 50Ω S
min
30
Ratings
typ
1.2
4.4
14
24
30
820
130
90
9.5
25
63
28
15
2.6
2.7
0.8
max
1
±10
2.6
19
34
42
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
EMH1405-TL-H
Package
EMH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1667-2/7





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)