BDV96

isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCER Collector-Emitter Voltage BDV92 BDV94 BDV96 -60 -80 -100 VCEO Collector-Emitter Voltage BDV92 BDV94 BDV96 -60 -80 -100 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -10 ICM Collector Current-Peak -20 IB Base Current -7 IE Emitter Current -14 PC Collector Power Dissipation @ TC=25℃ 100 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W BDV92/94/96 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDV92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDV92 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV94 IC= -30mA ;IB=0 -80 V BDV96 -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3.0 V ...