SVF4N60F

SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60DTR SVF4N60MJ SVF4N60M Package TO-220-3L TO-220F-3L TO-220F-3L TO-262-3L TO-252-2L TO-252-2L TO-251J-3L TO-251D-3L Marking SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60D SVF4N60MJ SVF4N60M HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn Material Pb free Pb free Halogen free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tube Tape & Reel Tube Tube REV:1.6 2012.07.24 Page 1 of 11 Silan Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted；reference only) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power D...