Trench MOSFET. MDU1514 Datasheet

MDU1514 MOSFET. Datasheet pdf. Equivalent

MDU1514 Datasheet
Recommendation MDU1514 Datasheet
Part MDU1514
Description Single N-channel Trench MOSFET
Feature MDU1514; MDU1514 – Single N-Channel Trench MOSFET 30V MDU1514 Single N-channel Trench MOSFET 30V, 66.3A, 6.0.
Manufacture MagnaChip
Datasheet
Download MDU1514 Datasheet





MagnaChip MDU1514
MDU1514
Single N-channel Trench MOSFET 30V, 66.3A, 6.0mΩ
General Description
The MDU1514 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1514 is suitable device for DC/DC Converter
and general purpose applications.
Features
VDS = 30V
ID = 66.3A @VGS = 10V
RDS(ON)
< 6.0 m@VGS = 10V
< 9.0 m@VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
May. 2011. Version 1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
66.3
53.0
22.8(3)
18.2(3)
100
46.2
29.6
5.5(3)
3.5(3)
79.0
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
22.7
2.7
Unit
oC/W
MagnaChip Semiconductor Ltd.



MagnaChip MDU1514
Ordering Information
Part Number
MDU1514URH
Temp. Range
-55~150oC
Package
PowerDFN56
Packing
Tape & Reel
Quantity
3000 units
Rohs Status
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
Min Typ
Max Unit
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
30 -
1.3 1.9
-
2.7
V
VDS = 30V, VGS = 0V
-- 1
TJ=55oC
-
-
5 µA
VGS = ±20V, VDS = 0V
- - ±0.1
VGS = 10V, ID = 18A
TJ=125oC
-
-
5.2 6.0
7.5 8.7 mΩ
VGS = 4.5V, ID = 14A
- 7.5 9.0
VDS = 5V, ID = 10A
- 33 - S
VDS = 15.0V, ID = 18A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
ID = 18A , RG = 3.0Ω
f=1 MHz
14.3
6.6
-
-
913
89
186
-
-
-
-
1.0
19
8.8
3
2.8
1217
119
248
7.9
11.5
27.0
8.3
2.0
23.8
11.0
-
-
1521
149
310
-
-
-
-
2.8
nC
pF
ns
IS = 18A, VGS = 0V
IF = 18A, dl/dt = 100A/µs
- 0.8 1.1 V
-
24.5 36.8
ns
-
16.7 25.1
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 22A, VDD = 27V, VGS = 10V.
3. T < 10sec.
May. 2011. Version 1.2
2 MagnaChip Semiconductor Ltd.



MagnaChip MDU1514
40
VGS = 10V 4.0V 3.5V
4.5V
30
5.0V
20
3.0V
10
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
1.8
Notes :
1.6
1. VGS = 10 V
2. ID = 16.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
15
12
9 VGS = 4.5V
6
VGS = 10V
3
0
5
10 15 20 25
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
100
Notes :
ID = 18.0A
80
60
40
20
TA = 25
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
Notes :
VDS = 5V
12
8
TA=25
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
Notes :
VGS = 0V
101
100
TA=25
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
May. 2011. Version 1.2
3 MagnaChip Semiconductor Ltd.





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