Document
Huajing Discrete Devices Silicon N-Channel Power MOSFET
○R
CS4N65A3HD
General Description:
CS4N65A3HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features:
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data: 13nC)
z Low Reverse transfer capacitances(Typical: 4.2pF)
z 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C
VESD(G-S)
TJ,Tstg TL
Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Operating Junction and Storage Temperature Range MaximumTemperature for Soldering
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 4 75 2.2
Rating
650 4
2.9 16 ±30 200 30 2.5 5.0 75 0.60
3000
150,–55 to 150 300
V A W Ω
Units V A A A V mJ mJ A
V/ns W
W/℃
V
℃ ℃
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2011
Huajing Discrete Devices
○R CS4N65A3HD
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS ΔBVDSS/ΔTJ
IDSS
IGSS(F) IGSS(R)
Drain to Source Breakdown Voltage Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25℃ VDS =650V, VGS= 0V, Ta = 25℃ VDS =520V, VGS= 0V, Ta = 25℃ VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp≤380µs,δ≤2%
Test Conditions
VGS=10V,ID=2A VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON) tr td(OFF) tf Qg Qgs Qgd
Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge
Test Conditions
VDS=15V, ID =2A VGS = 0V VDS = 25V f = 1.0MHz
Test Conditions
ID =4A VDD = 325V RG =25Ω
ID =4A VDD =325V VGS = 10V
Rating
Min. Typ. Max.
650 --
--
-- 0.67 --
-- -- 25
-- -- 250
-- -- 10
-- -- -10
Unit s
V V/℃ µA µA µA µA
Rating
Min. Typ. Max.
-- 2.2 2.5 2.0 4.0
Units
Ω V
Rating
Min. Typ. Max.
3.5 --- 570 -- 55 -- 4.2
Units S
pF
Rating
Min. Typ. Max.
-- 9.5 --- 4.9 --- 28.5 --- 9 --- 13 -- 3 -- 5
Units ns nC
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2011
Huajing Discrete Devices
○R CS4N65A3HD
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Pulse width tp≤380µs,δ≤2%
Test Conditions
IS=4.0A,VGS=0V IS=4.0A,Tj = 25°C dIF/dt=100A/us, VGS=0V
Min.
------
Rating
Typ. Max.
-- 4 -- 16 -- 1.5 503 -2.4 --
Units
A A V ns µC
Symbol
RθJC RθJA
Parameter
Junction-to-Case Junction-to-Ambient
Typ. Units 1.67 ℃/W 62.5 ℃/W
Gate-source Zener diode
Symbol
Parameter
Test Conditions
Rating
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 20
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
Units V
a1:Repetitive rating; pulse width limited by maximum junction temperature a2:L=10mH, ID=6.3A, Start TJ=25℃ a3:ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2011
Huajing Discrete Devices
○R CS4N65A3HD
Id , Drain Current , Amps
Id , Drain Current , Amps
Characteristics Curve:
100
10
1
OPERATION IN THIS AREA 0 .1 MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED TC=25℃ Single Pulse
1ms 10ms DC 100ms
0.01 1
10 100 1000 V ds , D rain-to-Source V oltage , V olts
Figure 1 Maximun Forward Bias Safe Operating Area 6
5
4
3
2
1
Id , Drain Current , Amps
PD , Power Dissipation ,Watts
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 TC , Case Temperature , C
Figure 2 Maximun Power Dissipation.