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CS4N65A3HD Dataheets PDF



Part Number CS4N65A3HD
Manufacturers HUAJING
Logo HUAJING
Description Silicon N-Channel Power MOSFET
Datasheet CS4N65A3HD DatasheetCS4N65A3HD Datasheet (PDF)

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4N65A3HD General Description: CS4N65A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features: z Fast Sw.

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Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4N65A3HD General Description: CS4N65A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features: z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C VESD(G-S) TJ,Tstg TL Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Operating Junction and Storage Temperature Range MaximumTemperature for Soldering VDSS ID PD(TC=25℃) RDS(ON)Typ 650 4 75 2.2 Rating 650 4 2.9 16 ±30 200 30 2.5 5.0 75 0.60 3000 150,–55 to 150 300 V A W Ω Units V A A A V mJ mJ A V/ns W W/℃ V ℃ ℃ WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2011 Huajing Discrete Devices ○R CS4N65A3HD Electrical Characteristics(Tc= 25℃ unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions VDSS ΔBVDSS/ΔTJ IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V, ID=250µA ID=250uA,Reference25℃ VDS =650V, VGS= 0V, Ta = 25℃ VDS =520V, VGS= 0V, Ta = 25℃ VGS =+30V VGS =-30V ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Pulse width tp≤380µs,δ≤2% Test Conditions VGS=10V,ID=2A VDS = VGS, ID = 250µA Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Resistive Switching Characteristics Symbol Parameter td(ON) tr td(OFF) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge Test Conditions VDS=15V, ID =2A VGS = 0V VDS = 25V f = 1.0MHz Test Conditions ID =4A VDD = 325V RG =25Ω ID =4A VDD =325V VGS = 10V Rating Min. Typ. Max. 650 -- -- -- 0.67 -- -- -- 25 -- -- 250 -- -- 10 -- -- -10 Unit s V V/℃ µA µA µA µA Rating Min. Typ. Max. -- 2.2 2.5 2.0 4.0 Units Ω V Rating Min. Typ. Max. 3.5 --- 570 -- 55 -- 4.2 Units S pF Rating Min. Typ. Max. -- 9.5 --- 4.9 --- 28.5 --- 9 --- 13 -- 3 -- 5 Units ns nC WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2011 Huajing Discrete Devices ○R CS4N65A3HD Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Pulse width tp≤380µs,δ≤2% Test Conditions IS=4.0A,VGS=0V IS=4.0A,Tj = 25°C dIF/dt=100A/us, VGS=0V Min. ------ Rating Typ. Max. -- 4 -- 16 -- 1.5 503 -2.4 -- Units A A V ns µC Symbol RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient Typ. Units 1.67 ℃/W 62.5 ℃/W Gate-source Zener diode Symbol Parameter Test Conditions Rating Min. Typ. Max. VGSO Gate-source breakdown voltage IGS= ±1mA(Open Drain) 20 The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Units V a1:Repetitive rating; pulse width limited by maximum junction temperature a2:L=10mH, ID=6.3A, Start TJ=25℃ a3:ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2011 Huajing Discrete Devices ○R CS4N65A3HD Id , Drain Current , Amps Id , Drain Current , Amps Characteristics Curve: 100 10 1 OPERATION IN THIS AREA 0 .1 MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 1ms 10ms DC 100ms 0.01 1 10 100 1000 V ds , D rain-to-Source V oltage , V olts Figure 1 Maximun Forward Bias Safe Operating Area 6 5 4 3 2 1 Id , Drain Current , Amps PD , Power Dissipation ,Watts 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC , Case Temperature , C Figure 2 Maximun Power Dissipation.


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