CEB15A03

CEP15A03/CEB15A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 190 IDM 760 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 200 1.3 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 405 52 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 2. 2010.June http://www.cet-mos.com CEP15A03/CEB15A03 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS ...