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CEB73A3G Dataheets PDF



Part Number CEB73A3G
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEB73A3G DatasheetCEB73A3G Datasheet (PDF)

CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source V.

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CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 62 248 75 0.52 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 62.5 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2009.June http://www.cet-mos.com CEP73A3G/CEB73A3G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VGS = 4.5V, ID = 20A 1 3V 7.5 9 mΩ 11 16 mΩ Gate input resistance Dynamic Characteristics c Rg f=1MHz,open Drain 1.6 Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 1005 265 170 pF pF pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 15V, ID = 10A, VGS = 10V, RGEN = 1Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 15V, ID = 10A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings 16 32 9 18 35.5 71 9 18 22 28.6 3 7 ns ns ns ns nC nC nC Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 30A 62 A 1.2 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 6 2 ID, Drain Current (A) C, Capacitance (pF) CEP73A3G/CEB73A3G 50 VGS=10,8,6,5V 40 75 60 ID, Drain Current (A) 30 VGS=4V 20 10 VGS=3V 0 01 23 4 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 45 30 15 0 0 25 C TJ=125 C -55 C 1234 5 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 1200 1000 Ciss 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) 2.2 ID=30A 1.9 VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 102 101 100 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) CEP73A3G/CEB73A3G 10 VDS=15V ID=10A 8 6 4 2 0 0 6 12 18 24 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S 103 RDS(ON)Limit 102 100ms 1ms 10ms 101 DC TC=25 C TJ=150 C 100 Single Pulse 10-1 100 101 102 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH 4 Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-2 10-2 10-1 100 101 102 Square Wave Pulse Duration (msec) PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 103 104 Figure 11. Normalized Thermal Transient Impedance Curve 4 - 97 .


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