Document
CEP73A3G/CEB73A3G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
62 248 75 0.52
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2
62.5
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1. 2009.June http://www.cet-mos.com
CEP73A3G/CEB73A3G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
30
1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VGS = 4.5V, ID = 20A
1
3V 7.5 9 mΩ 11 16 mΩ
Gate input resistance Dynamic Characteristics c
Rg f=1MHz,open Drain
1.6 Ω
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 15V, VGS = 0V, f = 1.0 MHz
1005 265 170
pF pF pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 15V, ID = 10A, VGS = 10V, RGEN = 1Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 15V, ID = 10A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
16 32 9 18 35.5 71 9 18 22 28.6 3 7
ns ns ns ns nC nC nC
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 30A
62 A 1.2 V
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
6
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP73A3G/CEB73A3G
50 VGS=10,8,6,5V
40
75 60
ID, Drain Current (A)
30 VGS=4V
20
10 VGS=3V
0 01
23
4
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
45
30
15
0 0
25 C
TJ=125 C
-55 C
1234
5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200 1000
Ciss
800
600
400 Coss 200 Crss
0 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
2.2 ID=30A 1.9 VGS=10V 1.6 1.3 1.0 0.7 0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage
Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CEP73A3G/CEB73A3G
10 VDS=15V ID=10A
8
6
4
2
0 0 6 12 18 24
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
103 RDS(ON)Limit
102 100ms
1ms 10ms 101 DC
TC=25 C TJ=150 C 100 Single Pulse 10-1 100 101 102
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
4
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
10-1
0.2
0.1
0.05 0.02 0.01 Single Pulse
10-2 10-2
10-1
100 101 102
Square Wave Pulse Duration (msec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
103
104
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 97
.