CEP85N75

CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP85N75 CEB85N75 CEF85N75 VDSS 75V 75V 75V RDS(ON) 12mΩ 12mΩ 12mΩ ID 86A 86A 86A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 75 VGS ±30 ID 86 86e IDM f 344 344e 200 75 PD 1.33 0.5 EAS IAS TJ,Tstg 880 880 45 45 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2 65 Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2008.Sep. http://www.cet-mos.com CEP85N75/CEB85N75 CEF85N75 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Cur...