Document
CEP85N75/CEB85N75 CEF85N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP85N75 CEB85N75 CEF85N75
VDSS 75V 75V 75V
RDS(ON) 12mΩ 12mΩ 12mΩ
ID 86A
86A 86A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole.
D
G
D
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263 TO-220F
VDS 75
VGS ±30
ID 86 86e
IDM f
344 344e
200 75 PD 1.33 0.5
EAS IAS TJ,Tstg
880 880 45 45
-55 to 175
Units
V V A A W W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.75 62.5
2 65
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2008.Sep. http://www.cet-mos.com
CEP85N75/CEB85N75 CEF85N75
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 75V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 40A
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
gFS Ciss Coss Crss
VDS = 15V, ID = 40A VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 37.5V, ID = 45A, VGS = 10V, RGEN = 4.7Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 60V, ID = 75A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 40A
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area .
Min 75
2
Typ
10
45 3500 715
70 28 9 83 10 90 19 23
Max Units
1 100 -100
V µA nA nA
4V 12 mΩ
S pF pF pF
56 ns 18 ns 166 ns 20 ns 119 nC
nC nC
86 A 1.5 V
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP85N75/CEB85N75 CEF85N75
50 VGS=10,9,8,7V
40
30 .