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CEB85N75 Dataheets PDF



Part Number CEB85N75
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEB85N75 DatasheetCEB85N75 Datasheet (PDF)

CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP85N75 CEB85N75 CEF85N75 VDSS 75V 75V 75V RDS(ON) 12mΩ 12mΩ 12mΩ ID 86A 86A 86A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM.

  CEB85N75   CEB85N75



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CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP85N75 CEB85N75 CEF85N75 VDSS 75V 75V 75V RDS(ON) 12mΩ 12mΩ 12mΩ ID 86A 86A 86A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 75 VGS ±30 ID 86 86e IDM f 344 344e 200 75 PD 1.33 0.5 EAS IAS TJ,Tstg 880 880 45 45 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2 65 Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2008.Sep. http://www.cet-mos.com CEP85N75/CEB85N75 CEF85N75 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 75V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 40A Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c gFS Ciss Coss Crss VDS = 15V, ID = 40A VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 37.5V, ID = 45A, VGS = 10V, RGEN = 4.7Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 60V, ID = 75A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 40A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . Min 75 2 Typ 10 45 3500 715 70 28 9 83 10 90 19 23 Max Units 1 100 -100 V µA nA nA 4V 12 mΩ S pF pF pF 56 ns 18 ns 166 ns 20 ns 119 nC nC nC 86 A 1.5 V 2 ID, Drain Current (A) C, Capacitance (pF) CEP85N75/CEB85N75 CEF85N75 50 VGS=10,9,8,7V 40 30 .


CEP85N75 CEB85N75 CEF85N75


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