CEP16N10/CEB16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ...
CEP16N10/CEB16N10
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
100
±20
15.2 60 60 0.48
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.5 50
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1. 2010.Jan. http://www.cet-mos.com
CEP16N10/CEB16N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics
Symbol
Test Condition
Min Typ Max Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
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