CEB30N15L

CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 150 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 30 21 120 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 150 1.2 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . Symbol RθJC RθJA 1 Limit 1 50 Units C/W C/W Rev 3. 2010.Dec http://www.cet-mos.com CEP30N15L/CEB30N15L Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 150V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 150 165 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-So...