CEP730G/CEB730G
CEF730G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP730G CEB730...
CEP730G/CEB730G
CEF730G
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP730G CEB730G
VDSS 400V 400V
CEF730G
400V
RDS(ON) 1Ω 1Ω 1Ω
ID 5.5A 5.5A 5.5A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired.
D
G
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 400
VGS ±30
ID 5.5 5.5 e
IDM f
22 22 e
83 41 PD 0.66 0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.5 62.5
2.5 65
Units
V V A A W W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2009.Nov. http://www.cet-mos.com
CEP730G/CEB730G CEF730G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics
Symbol
Test Condition
Min Typ Max Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSS...