CEP13N5/CEB13N5 CEF13N5
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP13N5 CEB13N5 CEF13N5
VDSS...
CEP13N5/CEB13N5 CEF13N5
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP13N5 CEB13N5 CEF13N5
VDSS 500V 500V
500V
RDS(ON) 0.48Ω 0.48Ω
0.48Ω
ID 13A 13A 13A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263 TO-220F
VDS 500
VGS ±30
ID 13 13 d
ID IDM e
8 8d 52 52d
214 60 PD 1.43 0.4
EAS 781
IAS 12.5
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.7 62.5
2.5 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1. 2014.Oct. http://www.cet-mos.com
CEP13N5/CEB13N5 CEF13N5
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Rev...