CEB830G

CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID @VGS 5A 10V 5A 10V 5A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM f 500 ±30 5 20 5e 20 e Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 83 42 PD 0.66 0.33 Single Pulsed Avalanche Energy g EAS 39.2 Single Pulsed Avalanche Current g Operating and Store Temperature Range IAS TJ,Tstg 2.8 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.5 62.5 3.6 65 Units V V A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2014.Sep. http://www.cet-mos.com CEP830G/CEB830G CEF830G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGS...