CEP12N6/CEB12N6
CEF12N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP12N6 CEB12N6 CEF12N6
VDSS 600V 600V
600V
RDS(ON) 0.65Ω 0.65Ω
0.65Ω
ID 12A 12A 12A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB...
