CEF10N6

CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP10N6 CEB10N6 CEF10N6 VDSS 600V 600V 600V RDS(ON) 0.75Ω 0.75Ω 0.75Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 600 ±30 10 6 40 166 1.3 10d 6d 40 d 50 0.4 Single Pulsed Avalanche Energy h EAS 187.5 Single Pulsed Avalanche Current h IAS 5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2.5 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2011.Feb http://www.cet-mos.com CEP10N6/CEB10N6 CEF10N6 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VDS = 480V, Tc = 125 C Gate Body ...