CEP02N6G/CEB02N6G CEF02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP02N6G CEB02N6G CEF02N6G
VDSS 600V 600V
600V
RDS(ON) 5Ω 5Ω
5Ω
ID 2.2A 2.2A 2.2A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(D...
