CEP85A3

CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-263 & TO-220 package. D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 25 ±20 90 360 89 0.71 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.4 50 Units V V A A W W/ C C Units C/W C/W Rev 1. 2005.September 1 http://www.cet-mos.com CEP85A3/CEB85A3 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 25 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 30A VGS = 4.5V,...