GWS2111

GWS2111 Dual 12V N-Channel Power MOSFET GWS2111 V(BR)DSS rDS(on) Product Summary ID=250uA VGS=4.5V 12.0 V 34 mΩ Min Typ Features Low RDS (on) in a small footprint Ultra low gate charge and figure of merit Chip-scale 0.77 mm x 0.77 mm LGA package Low Thermal Resistance Equivalent Circuit FET1 FET2 Gate1 Gate2 . .. .. .. . Applications Li ion Battery Protection Portable Devices, Cell Phones, PDA Rated for short circuit and over current protection Integrated gate diodes provide ESD protection of 2500V HBM. Source1 Source2 Description The GWSXXXX is a Dual 12V, 34 mΩ, N-Channel Power Mosfet used for Li ion battery protection. It is offered in a chip-scale 0.77 mm X 0.77 mm LGA with a very low thickness profile of 0.20 mm. The device uses Great Wall Semiconductor’s patented Lateral PowerTM CMOS technology. It has extremely high power density, reducing the board size of Li Ion Battery power system. Designed for hand held devices with a high level of ESD protection. 0.77 mm G2 S2 G1 S1 0.77 mm Bottom View Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwis e noted) Parameter Symbol Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage a Drain Current VGS ± 8 ID 1.0 Pulsed Drain Current a Maximum Power Dissipation o TA=25 C o TA=70 C IDM PD 10 1.0 0.64 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Unit V A W o C Thermal Resistance Ratings Parameter Junction-to-Am bient Junctio...