AFT05MS004NT1

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (1) 20.9 74.9 4.9 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 136–174 (2) 0.10 17.8 61.8 6.1 350–520 (3) 0.12 15.4 49.4 4.2 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 435(3) CW > 65:1 at all 0.24 Phase Angles (3 dB Overdrive) 9.0 No Device Degradation 1. Measured in 520 MHz narrowband test circuit. 2. Measured in 136–174 MHz VHF broadband reference circuit. 3. Measured in 350–520 MHz UHF broadband reference circuit. Features  Characterized for Operation from 136 to 941 MHz  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Integrated Stability Enhancements  Wideband — Full Power Across the Band  Exceptional Thermal Performance  Extreme Ruggedness  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Typical Applications  Output Stage VHF Band Handheld Radio  Output Stage UHF Band Handheld Radio  Output Stage for...