T1M3F-A

LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110℃) High Surge Current of 10 Amps Pb-Free Package T1M3F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA) TO-92 DIM. MIN. MAX. A 4.45 4.70 B 4.32 5.33 C 3.18 4.19 D 1.15 1.39 E 2.42 2.66 F 12.7 ------ G 2.04 2.66 I 3.43 ----- All Dimensions in millimeter PIN ASSIGNMENT 1 Main Terminal 1 2 Gate 3 Main Terminal 2 MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed) Rating Peak Repetitive Off– State Voltage (TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open) T1M3F400A T1M3F600A Symbol VDRM, VRRM Value 400 600 Unit Volts On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50℃) Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25℃) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power ( t ≦2.0us ,Tc = 80℃) Average Gate Power (Tc = 80℃, t ≦8.3 ms ) Peak Gate Current ( t ≦2.0us ,Tc = 80℃) Peak Gate Voltage ( t ≦2.0us ,Tc = 80℃) Operating Junction Temperature Range Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous ba...