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MBR1050CT Dataheets PDF



Part Number MBR1050CT
Manufacturers Yea Shin Technology
Logo Yea Shin Technology
Description 10A SCHOTTKY BARRIER RECTIFIER
Datasheet MBR1050CT DatasheetMBR1050CT Datasheet (PDF)

DATA SHEET SEMICONDUCTOR MBR1020CT~MBR10200CT 10A SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O High temperature soldering : 260OC / 10 seconds at terminals Pb free product at available : 99% Sn above meet RoHS environment substance directive request .269(6.85) .226(5.75) .624(15.87) .584(13.9.

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DATA SHEET SEMICONDUCTOR MBR1020CT~MBR10200CT 10A SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O High temperature soldering : 260OC / 10 seconds at terminals Pb free product at available : 99% Sn above meet RoHS environment substance directive request .269(6.85) .226(5.75) .624(15.87) .584(13.93) TO-220AB .419(10.66) .387(9.85) .134(3.40) MIN. Unit:inch(mm) .196(5.00) .163(4.16) .059(1.50) .039(1.00) MECHANICAL DATA Case: TO-220 Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-750, Method 2026 Polarity: As Marked on Body Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number .055(1.40) .039(1.00) .039(1.00) .019(0.50) .1(2.54) .1(2.54) .177(4.50) MAX. .59(15.00) .50(12.70) .025(0.65) MAX. Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBR MBR MBR MBR MBR MBR MBR MBR MBR Units 1020CT 1030CT 1040CT 1050CT 1060CT 1080CT 10100CT 10150CT 10200CT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 100 150 200 Volts RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 105 140 Volts Average Rectified Output Current @TC = 95°C IF 10 Amp Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 120 Amps Forward Voltage @IF = 5.0A Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C Typical Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range VF IRM RθJC RθJA Cj Tj, TSTG 0.55 0.75 0.85 0.90 0.99 Volts 0.1 0.025 mA 50 7 3 OC /W 60 170 pF -55 to +150 Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. http://www.yeashin.com 1 REV.02 20150105 AVERAGE FORWARD CURRENT DEVICE CHARACTERISTICS MBR1020CT~MBR10200CT 10.0 5.0 0 95 150 CASE TEMPERATURE, OC Fig.1- FORWARD CURRENT DERATING CURVE INSTANTANEOUS FORWARD CURRENT AMPERES 40 20,30,40V 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .4 .5 .6 50,60V 80,100V 150V 200V TJ = 25OC Pulse Width = 300ms 1% Duty Cycle .7 .8 .9 1.0 1.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fig.2- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MILAMPERES 100 TC = 100OC 10 TC = 75OC 1.0 TC = 25OC 0.1 0.01 0 100 200 300 PERCENT OF PEAK REVERSE VOLTAGE Fig.3- TYPICAL REVERSE CHARACTERISTIC PEAK FORWARD SURGE CURRENT, 150 120 20V-100V 110 8.3ms Single Half Since-Wave JEDEC Method 90 150V-200V 70 50 30 20 10 1 2 5 10 20 NO. OF CYCLE AT 60HZ 50 100 Fig.4- MAXIMUM NON-REPETITIVE SURGE CURRENT CAPACITANCE, pF 300 250 200 TJ = 25OC 150 100 50 0 12 5 10 20 50 100 200 5.


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