D864

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD864 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement to Type 2SB765 APPLICATIONS ·Medium speed and power switching applications. i.cnABSOLUTE MAXIMUM RATINGS (Ta=25℃) .iscsemSYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V wwwVCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Collector Current-Peak Collector Power Dissipation PC TC=25℃ Tj Junction Temperature 6A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD864 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA , IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A, IB=B -30mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage i.cnICBO Collector Cutoff Current .iscsemICEO Colle...