P-Channel MOSFET
ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V) -30
RDS(on) (Ω) 0.012 @ VGS=-10V 0.018 @ VG...
Description
ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V) -30
RDS(on) (Ω) 0.012 @ VGS=-10V 0.018 @ VGS=-4.5V
ID(A) -17.1
Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection applications
Features Low on-resistance Low gate drive SO8 package
Applications Power management functions Disconnect switches Reverse battery protection
Ordering information
Device ZXMP3F35N8TA
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
SD SD SD GD
Top view
Device marking ZXMP 3F35
Issue 1 - August 2008
1
www.zetex.com
© Diodes Incorporated 2008
www.diodes.com
ZXMP3F35N8
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage
(b) Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C (b) (a)
@ VGS= -10V; TA=25°C (d)
@ VGS= -10V; TL=25°C Pulsed Drain current (c) Continuous Source current (Body diode) (b) Pulsed Source current (Body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor
(b) Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C (d) Linear derating factor
Operating and storage temperature range
Symbol VDSS VGS ID
IDM IS ISM PD
PD PD Tj, Tstg
Limit -30 ±20 -12.3 -9.9 -9.3 -17.1
-58
-4.9
-58
1.56 12.5 2.8 22.2 5.35 42.9 -55 to 150
Unit V V V
A A A W mW/°C W mW/°C W mW/°C °C
Th...
Similar Datasheet