ZXMP3F37N8TA

ZXMP3F37N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) -30 RDS(on) (Ω) 0.025 @ VGS=-10V 0.041 @ VGS=-4.5V ID(A) -10.7 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for high efficiency power management applications. Features Low on-resistance Fast switching speed Low gate drive SO8 package Applications DC-DC Converters Power management functions Disconnect switches Motor control Ordering information Device ZXMP3F37N8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 S S S G D D D D Device marking ZXMP 3F37 Issue 1 - August 2008 1 www.zetex.com © Diodes Incorporated 2008 www.diodes.com ZXMP3F37N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage (b) Continuous Drain current @ VGS= -10V; TA=25°C @ VGS= -10V; TA=70°C (b) (a) @ VGS= -10V; TA=25°C (d) @ VGS= -10V; TL=25°C Pulsed Drain current (c) Continuous Source current (Body diode) (b) Pulsed Source current (Body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor (b) Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C (d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD PD Tj, Tstg Limit -30 ±20 -8.5 -6.8 -6.4 -10.7 -39.5 -4.4 -39.5 1.56 12.5 2.8 22.2 4.4 35.4 -55 to 150 Unit V V V A A A W mW/°C W m...