ZXMP3F36N8TA

ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) -30 RDS(on) (Ω) 0.020 @ VGS=-10V 0.028 @ VGS=-4.5V ID(A) -12.6 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance SO8 package Applications Battery Protection Battery disconnect Power management functions Ordering information Device ZXMP3F36N8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 Device marking ZXMP 3F36 SD SD SD GD Top view Issue 1 - August 2008 1 www.zetex.com © Diodes Incorporated 2008 www.diodes.com ZXMP3F36N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage (b) Continuous Drain current @ VGS= -10V; TA=25°C @ VGS= -10V; TA=70°C (b) (a) @ VGS= -10V; TA=25°C (d) @ VGS= -10V; TL=25°C Pulsed Drain current (c) Continuous Source current (Body diode) (b) Pulsed Source current (Body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor (b) Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C (d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD PD Tj, Tstg Limit -30 ±20 -9.6 -7.7 -7.2 -12.6 -45 -4.7 -45 1.56 12.5 2.8 22.2 4.7 37.9 -55 to 150 Unit V V V A A A W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient (a) (b) Junction to ambient (d) Junction to lead Symb...