DatasheetsPDF.com

D1115 Dataheets PDF



Part Number D1115
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SD1115
Datasheet D1115 DatasheetD1115 Datasheet (PDF)

2SD1115(K) Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage switching, igniter Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2 1 4.5 kΩ (Typ) 250 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) P.

  D1115   D1115



Document
2SD1115(K) Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage switching, igniter Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2 1 4.5 kΩ (Typ) 250 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg Ratings 400 300 7 3 6 40 150 –55 to +150 Unit V V V A A W °C °C 2SD1115(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown V(BR)CBO voltage 400 Collector to emitter sustain voltage VCEO(sus) 300 Emitter to base breakdown voltage V(BR)EBO 7 www.DataSheet4U.com Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage ICEO hFE VCE(sat) — 500 — Base to emitter saturation voltage VBE(sat) — Turn on time Turn off time Note: 1. Pulse test. ton — toff — Typ — — — — — — — 1.0 22 Max — — — 100 — 1.5 2.0 — — Unit V Test conditions IC = 0.1 mA, IE = 0 V IC = 2 A, PW = 50 µs, f = 50 Hz, L = 10 mH V IE = 50 mA, IC = 0 µA VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 2 A*1 V IC = 2 A, IB = 20 mA*1 V µs IC = 2 A, IB1 = –IB2 = 20 mA µs Collector power dissipation Pc (W) Maximum Collector Dissipation Curve 60 40 20 Collector current IC (A) 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 10 3 iC (peak) IC (max) Ta = 25°C 1.0 PPWW==11D0mCmsOs1p1sehsroahttoiot n (T C = 25°C) 0.3 0.1 0.03 0.01 0.003 0.005 0.5 1.0 2 5 10 20 50 100200 500 Collector to emitter voltage VCE (V) 2 www.DataSheet4U.com Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) DC current transfer ratio hFE Collector current IC (A) Typical Output Characteristics 5 TC = 25°C 4 1.0 0.8 0.6 3 0.4 2 0.2 mA 1 IB = 0 0 12345 Collector to emitter voltage VCE (V) 10,000 DC Current Transfer Ratio vs. Collector Current 5,000 2,000 1,000 = 75°C T C 25 –25 500 200 100 0.1 VCE = 2 V Pulse 0.2 0.5 1.0 2 5 Collector current IC (A) 10 Saturation Voltage vs. Collector Current 10 lC = 100 lB 5 TC = 25°C Pulse 2 VBE (sat) 1.0 VCE (sat) 0.5 0.2 0.1 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 10 2SD1115(K) 3 2SD1115(K) When using this document, keep the following in mind: www.DataSheet4U.com 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Hitachi Europe GmbH Semiconductor & IC Div. Electronic Components Group 2000 Sierra Point Parkway Continental Europe Brisbane, CA. 94005-1835 Dornacher Straße 3 USA D-85622 Feldkirchen Tel: 415-589-8300 München Fax: 415-583-4207 Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 4 .


MAX5444 D1115 TC58NVG2S3ETAI0


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)