HEXFET Power MOSFET
IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterrupti...
Description
IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
7.2m:
:G max. 9.0m
S ID (Silicon Limited)
97A
D
D D
DS G
TO-220AB IRFB4410ZPbF
DS G
D2Pak IRFS4410ZPbF
DS G
TO-262 IRFSL4410ZPbF
G Gate
D Drain
S Source
Base Part Number
IRFB4410ZPbF IRFSL4410ZPbF IRFS4410ZPbF
Package Type
TO-220 TO-262 D2Pak
Standard Pack
Form
Tube
Tube Tube Tape and Reel Left Tape and Reel Right
Quantity
50
50 50 800 800
Orderable Part Number
IRFB4410ZPbF IRFSL4410ZPbF IRFS4410ZPbF IRFS4410ZTRLPbF IRFS4410ZTRRPbF
Absolute Maximum Ratings Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
dSingle Pulse Avalanche Energy
IAR Avalanch...
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