AO4952

AO4952 30V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side Very Low RDS(on) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 11A <10.5mΩ <15.5mΩ Q2 30V 11A <11.5mΩ <16.5mΩ Top View SOIC-8 Bottom View Top View Q1: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D1 Pin1 D2 G2 D2 S2/D1 G1 S2/D1 S1 S2/D1 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche Energy L=0.1mH C 11 ID 9 IDM 75 IAS 18 EAS 16 11 9 74 15 11 VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 D2 G2 S2 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max Units 62.5 °C/W 90 °C/W 40 °C/W Rev.1.0: February 2013 www.aosmd.com Page 1 of 8...