CEF07N7

CEP07N7/CEB07N7 CEF07N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP07N7 CEB07N7 CEF07N7 VDSS 700V 700V 700V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID 6.6A 6.6A 6.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 6.6 26.4 166 1.3 6.6d 26.4d 50 0.4 Repetitive Avalanche Energy EAR 3.6 Single Pulsed Avalanche Energy h Operating and Store Temperature Range EAS TJ,Tstg 38.88 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2.5 65 Units V V A A W W/ C mJ mJ C Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2012.Nov http://www.cet-mos.com CEP07N7/CEB07N7 CEF07N7 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS...