CEP02N7G/CEB02N7G CEF02N7G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP02N7G CEB02N7G CEF02N7G...
CEP02N7G/CEB02N7G CEF02N7G
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP02N7G CEB02N7G CEF02N7G
VDSS 700V 700V
700V
RDS(ON) 6.75Ω 6.75Ω
6.75Ω
ID 2A 2A 2A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
TO-220F
VDS 700
VGS ±30
ID
2 2d 1.3 1.3 d
IDM e
8 8d
60 33 PD 0.48 0.26
EAS 11.25 IAS 1.5
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.1 62.5
3.9 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2011.Jan http://www.cet-mos.com
CEP02N7G/CEB02N7G CEF02N7G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Character...