CEP02N7G

CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7G CEB02N7G CEF02N7G VDSS 700V 700V 700V RDS(ON) 6.75Ω 6.75Ω 6.75Ω ID 2A 2A 2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 700 VGS ±30 ID 2 2d 1.3 1.3 d IDM e 8 8d 60 33 PD 0.48 0.26 EAS 11.25 IAS 1.5 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.1 62.5 3.9 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2011.Jan http://www.cet-mos.com CEP02N7G/CEB02N7G CEF02N7G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Character...