CEB03N8

CEP03N8/CEB03N8 CEF03N8 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP03N8 CEB03N8 CEF03N8 VDSS 800V 800V 800V RDS(ON) 4.8Ω 4.8Ω 4.8Ω ID @VGS 3A 10V 3A 10V 3A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 800 VGS ±30 ID 3 2 IDM e 12 125 PD 0.8 TO-220F 3d 2d 12 d 47 0.3 Single Pulsed Avalanche Energy h EAS 32 Single Pulsed Avalanche Current h IAS 3 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.2 62.5 3.2 62.5 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2012.July http://www.cet-mos.com CEP03N8/CEB03N8 CEF03N8 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Ch...