CEV2306

CEV2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-323 package. D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID 2 IDM 8 Maximum Power Dissipation PD 0.42 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 360 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 1. 2011.Mar. http://www.cet-mos.com CEV2306 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V 20 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 4.5V, ID = 2A VGS = 2.5V, ID = 1.5A 0.45 52 60 1V 65 mΩ 85 mΩ Input Capacitance Output Capacitance Reverse Transfer Capacita...