CEA3252

CEA3252 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 5 IDM 20 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.June http://www.cet-mos.com Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 5A VGS = 4.5V, ID = 4A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching ...