Document
STD45N10F7, STI45N10F7, STP45N10F7
N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages
Datasheet - production data
TAB 3
1
DPAK
TAB
TAB
123
I2PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
Features
Order codes
STD45N10F7 STI45N10F7 STP45N10F7
VDS
RDS(on) max.(1)
100 V 0.018 Ω
1. @ VGS = 10 V
• Ultra low on-resistance • 100% avalanche tested
ID 45 A
PTOT 60 W
Applications
• Switching applications
Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3
!-V
Order codes STD45N10F7 STI45N10F7 STP45N10F7
Table 1. Device summary
Marking
Package
45N10F7
DPAK I2PAK TO-220
Packaging Tape and reel
Tube
October 2013
This is information on a product in full production.
DocID024455 Rev 1
1/19
www.st.com
Contents
Contents
STD45N10F7, STI45N10F7, STP45N10F7
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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STD45N10F7, STI45N10F7, STP45N10F7
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings Parameter
Value
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID IDM(1)
Drain current (continuous) at TC = 100 °C Drain current (pulsed)
PTOT Total dissipation at Tc = 25 °C
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area.
100 20 45 32 180 60
-55 to 175
Unit
V V A A A W °C °C
Table 3. Thermal resistance
Symbol
Parameter
Value
DPAK
TO-220 I2PAK
Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
2.5 2.5 62.5
31.2
Unit
°C/W °C/W °C/W
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Electrical characteristics
2 Electrical characteristics
STD45N10F7, STI45N10F7, STP45N10F7
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states Test conditions
V(BR)DSS
Drain-source breakdown voltage (VGS= 0)
IDSS
Zero gate voltage drain current (VGS = 0)
IGSS VGS(th) RDS(on)
Gate body leakage current (VDS = 0) Gate threshold voltage
Static drain-source onresistance
ID = 1 mA VDS = 100 V VDS = 100 V; TC =125 °C VGS = 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 22.5 A
Min. Typ. Max. Unit 100 - V
10 µA 100 µA 100 nA 2.5 4.5 V 0.0145 0.018 Ω
Symbol
Parameter
Ciss Coss
Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 5. Dynamic Test conditions
VDS = 50 V, f =1 MHz, VGS = 0
VDD = 50 V, ID = 45 A VGS = 10 V Figure 14
Min. Typ. Max. Unit
- 1640 - 360
-
pF pF
- 25 - pF
- 25 - 5.1 - 12.2
-
nC nC nC
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Table 6. Switching times Test conditions
VDD = 50 V, ID = 22.5 A, RG = 4.7 Ω, VGS = 10 V Figure 13
Min. Typ. Max. Unit
- 15 - ns
- 17 - ns
- 24 - ns
-8
- ns
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STD45N10F7, STI45N10F7, STP45N10F7
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
ISD ISDM(1) VSD(2)
Source-drain current Source-drain current (pulsed) Forward on voltage
ISD = 45 A, VGS = 0
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 45 A, di/dt = 100 A/µs,
VDD = 80 V, Tj = 150 °C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%.
-
45 A 180 A 1.1 V 53 ns 67 nC 2.5 A
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Electrical characteristics
STD45N10F7, STI45N10F7, STP45N10F7
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID (A)
100
10
OpLeimraittieodn
in by
tmhiasxaRreDaS(iosn)
AM16107v1
100µs
1
0.1
0.01 0.1
1ms 10ms
Tj=175°C Tc=25°C Single pulse
1 10 VDS(V)
Figure 3. Thermal impedance
K δ=0.5
AM16120v1
0.2 0.1
10-1 0.05 0.02 0.01
Single pulse
10-2 10-5
10-4 10-3 10-2 10-1 10 0 tp(s)
Figure 4. Output characteristics
ID(A) 160
AM16109v1
VGS=10V
140 9V
120 8V 100
80 7V
60 6V
40
20 5V 0 0 2 4 6 8 VDS(V)
F.