M29W320ET

M29W320ET M29W320EB 32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory Features „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access times: 70, 90ns „ Programming time – 10μs per byte/word typical – Double word/ Quadruple byte Program „ Memory Blocks – Memory Array: 63 Main Blocks – 8 Parameter Blocks (Top or Bottom Location) „ Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend „ Unlock Bypass Program command – Faster Production/Batch Programming „ VPP/WP pin for fast Program and Write Protect „ Temporary Block Unprotection mode „ Common Flash Interface – 64 bit Security code „ Extended memory Block – Extra block used as security block or to store additional information „ Low power consumption – Standby and Automatic Standby „ 100,000 Program/Erase cycles per block „ Electronic signature – Manufacturer code: 0020h – Top Device code M29W320ET: 2256h – Bottom Device code M29W320EB: 2257h „ RoHS® packages available TSOP48 (N) 12 x 20 mm FBGA BGA TFBGA48 (ZE) 6 x 8 mm FBGA64 (ZS) 11 x 13 mm May 2009 Rev 9 1/65 www.numonyx.com 1 Contents Contents M29W320ET, M29W320EB 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.1 Address Inputs (A0-A20) . . . . . . . . . . . . . . ...