CEG2288

CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package. G2 S2 S2 D TSSOP-8 G1 S1 S1 D D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 6.2 IDM 25 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 1. 2006.June http://www.cet-mos.com CEG2288 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchin...