CEM3083
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -13A, RDS(ON) = 10mΩ @VGS = -10...
CEM3083
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -13 IDM -52
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2007.Jun. http://www.cet-mos.com
CEM3083
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteri...