CEM3501L
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -5A, RDS(ON) = 65mΩ @VGS = -10V. RDS(ON) = 75mΩ @VGS = -4.5V. RDS(ON) = 100mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8...
