CEM4201
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -7.5A, RDS(ON) = 28mΩ @VGS = -10V. RDS(ON) = 38mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -40
VGS ±20
Drain Current-Continuous D.