CEM6867

CEM6867 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -3.1 IDM -12 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2011.Mar http://www.cet-mos.com CEM6867 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Symbol Test Condition BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.1A VGS = -4.5V, ID = -2.8A Input Capacitance Output Capacitance Reverse Transfer Capacitance Swi...