CEB35P10

CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -100 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -32 IDM -128 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 125 0.83 Single Pulsed Avalanche Energy e EAS 450 Single Pulsed Avalanche Current e IAS 30 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.2 62.5 Units V V A A W W/ C mJ A C Units C/W C/W Specification and data are subject to change without notice . 1 Rev 1. 2009.July http://www.cetsemi.com CEP35P10/CEB35P10 CEF35P10 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -100V, VGS = 0V VGS = 20V, VDS = 0V VG...