TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5176
High-Current Switching Applications DC-DC Converter ...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC5176
High-Current Switching Applications DC-DC Converter Applications
2SC5176
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High-speed switching: tstg = 1.0 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
100 80 7 5 8 1 1.8 150 −55 to 150
V V V
A
A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-10T1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.5 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Ta = 25°C)
2SC5176
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation...
