DatasheetsPDF.com

SVD3205T Dataheets PDF



Part Number SVD3205T
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 55V N-CHANNEL MOSFET
Datasheet SVD3205T DatasheetSVD3205T Datasheet (PDF)

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-D.

  SVD3205T   SVD3205T



Document
SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 110A,55V,RDS(on)(typ)=6.4mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD3205T Package TO-220-3L Marking SVD3205T Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.1 2012.03.07 Page 1 of 4 SVD3205T_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Rating 55 ±20 110 80 390 200 1.3 1050 -55~+150 -55~+150 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating 0.75 62 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=55V, VGS=0V VGS=±20V, VDS=0V VGS= VDS, ID=250µA RDS(on) VGS=10V, ID=55A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V, VGS=0V, f=1.0MHz VDD=28V, VGS=25V, RG=50Ω VDS=44V, ID=62A, VGS=10V Min. 55 --2.0 Typ. ----- Max. -25 ±100 4.0 Unit V µA nA V -- 6.4 8 mΩ -- 3247 -- -- 781 -- pF -- 211 -- -- 14 -- -- 101 --- 50 -- ns -- 65 -- -- -- 146 -- -- 35 nC -- -- 54 HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.1 2012.03.07 Page 2 of 4 SVD3205T_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current Pulsed Source Current IS Integral Reverse P-N Junction Diode in the ISM MOSFET Diode Forward Voltage VSD IS=110A, VGS=0V Reverse Recovery Time Reverse Recovery Charge Trr IS=110A, VGS=0V, Qrr dIF/dt=100A/µs Notes: 1. L=138μH, IAS=110A, VDD=25V, RG=0Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Ess.


IRF520 SVD3205T SCS8615C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)