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SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 110A,55V,RDS(on)(typ)=6.4mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVD3205T
Package TO-220-3L
Marking SVD3205T
Material Pb free
Packing Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.1
2012.03.07 Page 1 of 4
SVD3205T_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C TC=100°C
Drain Current Pulsed
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol VDS VGS
ID
IDM
PD
EAS TJ Tstg
Rating 55 ±20 110 80 390 200 1.3
1050 -55~+150 -55~+150
Unit V V
A
A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Rating 0.75 62
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol BVDSS IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=55V, VGS=0V VGS=±20V, VDS=0V VGS= VDS, ID=250µA
RDS(on)
VGS=10V, ID=55A
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V, VGS=0V, f=1.0MHz
VDD=28V, VGS=25V, RG=50Ω
VDS=44V, ID=62A, VGS=10V
Min. 55 --2.0
Typ. -----
Max. -25
±100 4.0
Unit V µA nA V
-- 6.4 8 mΩ
-- 3247 --
-- 781 -- pF
-- 211 --
-- 14 --
-- 101 --- 50 --
ns
-- 65 --
-- -- 146
-- -- 35 nC
-- -- 54
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.1
2012.03.07 Page 2 of 4
SVD3205T_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current Pulsed Source Current
IS Integral Reverse P-N Junction Diode in the
ISM MOSFET
Diode Forward Voltage
VSD IS=110A, VGS=0V
Reverse Recovery Time Reverse Recovery Charge
Trr IS=110A, VGS=0V, Qrr dIF/dt=100A/µs
Notes: 1. L=138μH, IAS=110A, VDD=25V, RG=0Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Ess.