N-CHANNEL MOSFET
OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
MPPS™ Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MOD...
Description
OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
MPPS™ Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ; ID= 3A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
3x2mm Dual Die MLP
FEATURES
Low On - Resistance Fast switching speed Low threshold Low gate drive 3mm x 2mm MLP
APPLICATIONS DC-DC Converters Power Management Functions Disconnection switches Motor Control
PINOUT
7
ORDERING INFORMATION
DEVICE
REEL TAPE WIDTH
ZXMN2AM832TA
7’‘ 8mm
ZXMN2AM832TC 13’‘ 8mm
QUANTITY PER REEL
3000 units
10000 units
DEVICE MARKING
DNA
3mm x 2mm Dual MLP underside view
ISSUE 3 - JANUARY 2005
1
SEMICONDUCTORS
OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
N-Channel
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
@VGS=10V; TA=25ЊC (b) (f) @VGS=10V; TA=70ЊC (b) (f) @VGS=10V; TA=25ЊC (a) (f)
Pulsed Drain Current
Continuous Source Current (Body Diode) (b) (f)
P...
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