ZXMN2F34MATA

DISCONTINUED ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS 20 RDS(on) (Ω) 0.060 @ VGS= 4.5V 0.120 @ VGS= 2.5V ID (A) 8.5 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features Low on-resistance Superior thermal performance (versus to SOT23) 2.5V gate drive capability DFN 2x2 package Applications Buck/Boost DC-DC Converters Motor Control LED Lighting Ordering information DEVICE ZXMN2F34MATA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 1M4 D G S GS D Issue 3 - May 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com DISCONTINUED ZXMN2F34MA Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.5; TA=25°C(a) @ VGS=4.5; TA=25°C(d) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD PD Tj, Tstg Limit 20 ±12 5.1 4.1 4.0 8.5 19 3.1 19 1.35 10.8 2.2 17.8 6.6 52.9 -55 to 150 Unit V V A A A A A A A W mW/°C W mW/°C W mW/°C °C Ther...