ZXMN3F30FHTA

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.047 @ VGS= 10V 0.065 @ VGS= 4.5V ID (A) 4.6 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features Low on-resistance 4.5V gate drive capability SOT23 Applications DC-DC Converters Power management functions Motor Control D G S Ordering information DEVICE ZXMN3F30FHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 D S Device marking KNA G Top view Issue 2 - February 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN3F30FH Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.5; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD Tj, Tstg Limit 30 ±20 4.6 3.7 3.8 21 2.2 21 0.95 7.6 1.4 11.2 -55 to 150 Unit V V A A A A A A W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to lead(d) Symbol R⍜JA R⍜JA R⍜JL Limit 131 89 68 Unit °C/W °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air c...