ZXMN3F318DN8TA

DISCONTINUED Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V(BR)DSS QG (nC) Q1 30 12.9 Q2 30 9 RDS(on) (Ω) 0.024 @ VGS= 10V 0.039 @ VGS= 4.5V 0.035 @ VGS= 10V 0.055 @ VGS= 4.5V ID (A) 7.3 5.7 6 4.8 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable with low (4.5V) gate drive. Features Low on-resistance 4.5V gate drive capability Low profile SOIC package Applications DC-DC Converters SMPS Load switching Motor control Backlighting Q2 Q1 Ordering information Device ZXMN3F318DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 Device marking ZXMN 3F318 Pinout – top view Issue 1 – March 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com DISCONTINUEDZXMN3F318DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA =25°C (a) (d) Linear Derating Factor Power Dissipation at TA =25°C (a) (e) Linear Derating Factor Power Dissipation at TA =25°C (b) (d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID LIMIT Q1 30 ± 20 7.3 5.9 5.7 LIMIT Q2 30 ± 20 6 4.8 4.6 UNIT V V A IDM IS ISM PD PD PD Tj, Tstg 33 25 3.5 3.3 33 25 1.25 10 1.8 14 2.1 17 -55 to +150 A A A W m...