ZXMN6A25N8

ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V ID(A) 7.0 Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features Low on-resistance Fast switching speed Low gate drive SO8 package Applications DC-DC Converters Power management functions Disconnect switches Motor control Ordering information Device ZXMN6A25N8TA Reel size (inches) 7 Device marking ZXMN6A25 Tape width (mm) 12 Quantity per reel 500 D G S SD SD SD GD Top view Issue 1 - April 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN6A25N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) @ VGS= 10V; TL=25°C (a)(d) Pulsed Drain current (c) Continuous Source current (Body diode) (b) Pulsed Source current (Body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C (b) Linear derating factor Power dissipation at TL =25°C (d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD PD Tj, Tstg Limit 60 ± 20 5.7 4.5 4.3 7.0 25.7 4.1 25.7 1.56 12.5 2.8 22.2 4.14 33.1 -55 to 150 Unit V V A A A A W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient (a) Junction to ambi...