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ZXMN10A09K Dataheets PDF



Part Number ZXMN10A09K
Manufacturers Diodes
Logo Diodes
Description 100V N-CHANNEL MOSFET
Datasheet ZXMN10A09K DatasheetZXMN10A09K Datasheet (PDF)

A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) 85mΩ @ VGS = 10V 100mΩ @ VGS = 6V ID TA = 25°C 7.7A 7.1A Features and Benefits • Low input capacitance • Low on-resistance • Fast switching speed • “Green” Component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET features low on-resistance, fast switching and a high avalanche withstand cap.

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A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) 85mΩ @ VGS = 10V 100mΩ @ VGS = 6V ID TA = 25°C 7.7A 7.1A Features and Benefits • Low input capacitance • Low on-resistance • Fast switching speed • “Green” Component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions • Disconnect switches • Motor control • Uninterrupted power supply TO252-3L Mechanical Data • Case: TO252-3L • Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (approximate) D D Top View D GS Pin Out – Top View G S Equivalent Circuit Ordering Information (Note 1) Product ZXMN10A09KTC Marking ZXMN10A09 Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMN 10A09 YYWW ZXMN = Product Type Marking Code, Line 1 10A09 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) ZXMN10A09K Document Number DS32045 Rev. 7 - 2 1 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Maximum Ratings @TA = 25°C unless otherwise specified Drain-Source voltage Gate-Source voltage Characteristic Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) Symbol VDSS VGS ID IDM IS ISM Value 100 ±20 7.7 6.2 5.0 27 11 27 Unit V V A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range (Note 2) (Note 3) (Note 6) (Note 2) (Note 3) (Note 6) (Note 5) Symbol PD RθJA RθJL TJ, TSTG Value 4.31 34.4 10.1 80.8 2.15 17.2 29 12.3 58 1.14 -55 to 150 Unit W mW/°C °C/W °C/W °C Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. ZXMN10A09K Document Number DS32045 Rev. 7 - 2 2 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Thermal Characteristics I Drain Current (A) D Thermal Resistance (°C/W) R DS(on) 10 Limit R DS(on) 10 Limit I Drain Current (A) D 1 100m 10m DC 1s 100ms T =25°C amb 25mm x 25mm 1oz FR4 10ms 1ms 100µs 1 10 100 V Drain-Source Voltage (V) DS Safe Operating Area 60 T =25°C amb 50 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.2 D=0.1 10 D=0.05 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Therm al Im pedance Thermal Resistance (°C/W) 1 100m 10m DC 1s 100ms T =25°C amb 50mm x 50mm 2oz FR4 10ms 1ms 100µs 1 10 100 V Drain-Source Voltage (V) DS Safe Operating Area 30 T =25°C amb 25 50mm x 50mm 2oz FR4 20 D=0.5 15 10 D=0.2 D=0.1 5 D=0.05 Single Pulse 0 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Transient Thermal Impedance 1k Single Pulse 100 T =25°C amb 50mm x 50mm 2oz FR4 10 1 100µ 1m 25mm x 25mm 1oz FR4 10m 100m 1 10 Pulse Width (s) 100 Pulse Power Dissipation 1k Max Power Dissipation (W) 4.5 4.0 50mm x 50mm 3.5 2oz FR4 3.0 25mm x 25mm 2.5 1oz FR4 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Max Power Dissipation (W) ZXMN10A09K Document Number DS32045 Rev. 7 - 2 3 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain.


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