Document
A Product Line of Diodes Incorporated
ZXMN10A09K
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(on)
85mΩ @ VGS = 10V 100mΩ @ VGS = 6V
ID TA = 25°C
7.7A
7.1A
Features and Benefits
• Low input capacitance • Low on-resistance • Fast switching speed • “Green” Component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications.
• DC-DC Converters • Power management functions • Disconnect switches • Motor control • Uninterrupted power supply
TO252-3L
Mechanical Data
• Case: TO252-3L • Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (approximate)
D
D
Top View
D GS
Pin Out – Top View
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product ZXMN10A09KTC
Marking ZXMN10A09
Reel size (inches) 13
Tape width (mm) 16
Quantity per reel 2,500
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN 10A09 YYWW
ZXMN = Product Type Marking Code, Line 1 10A09 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52)
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
1 of 8 www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMN10A09K
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source voltage Gate-Source voltage
Characteristic
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS = 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3) TA = 70°C (Note 3) (Note 2) (Note 4)
(Note 3)
(Note 4)
Symbol VDSS VGS
ID
IDM IS ISM
Value 100
±20 7.7 6.2 5.0 27 11 27
Unit V V
A
A A A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power dissipation Linear derating factor
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range
(Note 2)
(Note 3)
(Note 6) (Note 2) (Note 3) (Note 6) (Note 5)
Symbol
PD
RθJA RθJL TJ, TSTG
Value 4.31 34.4 10.1 80.8 2.15 17.2 29 12.3 58
1.14
-55 to 150
Unit
W mW/°C
°C/W °C/W
°C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
2 of 8 www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMN10A09K
Thermal Characteristics
I Drain Current (A)
D
Thermal Resistance (°C/W)
R DS(on)
10 Limit
R DS(on)
10 Limit
I Drain Current (A)
D
1 100m
10m
DC 1s 100ms
T =25°C amb
25mm x 25mm 1oz FR4
10ms 1ms 100µs
1 10 100
V Drain-Source Voltage (V) DS
Safe Operating Area
60 T =25°C
amb
50 25mm x 25mm 1oz FR4
40
D=0.5 30
20 D=0.2
D=0.1
10 D=0.05
Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Transient Therm al Im pedance
Thermal Resistance (°C/W)
1 100m
10m
DC 1s
100ms
T =25°C amb
50mm x 50mm 2oz FR4
10ms 1ms 100µs
1 10 100
V Drain-Source Voltage (V) DS Safe Operating Area
30 T =25°C
amb
25 50mm x 50mm 2oz FR4
20
D=0.5 15
10 D=0.2
D=0.1
5 D=0.05
Single Pulse 0 100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Transient Thermal Impedance
1k
Single Pulse
100
T =25°C amb
50mm x 50mm 2oz FR4
10
1 100µ 1m
25mm x 25mm 1oz FR4
10m 100m 1 10
Pulse Width (s)
100
Pulse Power Dissipation
1k
Max Power Dissipation (W)
4.5
4.0 50mm x 50mm
3.5 2oz FR4 3.0 25mm x 25mm 2.5 1oz FR4
2.0
1.5
1.0
0.5
0.0 0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
Max Power Dissipation (W)
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
3 of 8 www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMN10A09K
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain.